N-channel MOSFET with 30V drain-source voltage and 9.5A continuous drain current. Features low 10mΩ drain-to-source resistance and 2.95W power dissipation. Designed for surface mounting in an SO package, this component offers fast switching with turn-on delay of 14ns and fall time of 5ns. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4886DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 9.5A |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.56W |
| Mount | Surface Mount |
| Nominal Vgs | 800mV |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.01787oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4886DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4886DY-T1-E3 to view detailed technical specifications.
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