N-channel MOSFET, TrenchFET® series, designed for general-purpose small signal applications. Features a continuous drain current of 11A and a drain-source breakdown voltage of 30V. Offers a low drain-source on-resistance of 7mR. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 3.5W. Packaged in a surface-mount SOP-8 (SO) package, supplied on tape and reel. RoHS compliant.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power3.5W
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Technical Specifications
Vishay SI4888DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 7mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.061inch |
| Lead Free | Lead Free |
| Length | 0.196inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.5W |
| Mount | Surface Mount |
| Nominal Vgs | 800mV |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 3.5W |
| Radiation Hardening | No |
| Rds On Max | 7mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 14ns |
| Width | 0.157inch |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4888DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4888DY-T1-E3 to view detailed technical specifications.
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