N-channel JFET, designed for general-purpose small signal applications. Features a 30V drain-source voltage rating and a continuous drain current of 8.9A. Offers a low 11mΩ drain-source on-resistance. Operates within a temperature range of -55°C to 150°C. Packaged in a RoHS compliant SOIC package for surface mounting.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4894BDY-T1-E3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
8.9A
Drain to Source Resistance
11mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
11mR
Dual Supply Voltage
30V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Input Capacitance
1.58nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.4W
Mount
Surface Mount
Nominal Vgs
3V
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
11mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Turn-Off Delay Time
33ns
Turn-On Delay Time
13ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4894BDY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4894BDY-T1-E3 to view detailed technical specifications.
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