N-channel MOSFET, general purpose small signal transistor with 30V drain-source voltage and 8.9A continuous drain current. Features low 11mΩ drain-to-source resistance and 1.58nF input capacitance. Operates from -55°C to 150°C with a 1.4W maximum power dissipation. Packaged in a surface-mount SO package, this component is halogen-free and RoHS compliant.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4894BDY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
8.9A
Drain to Source Resistance
11mR
Drain to Source Voltage (Vdss)
30V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Input Capacitance
1.58nF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.4W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
11mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
3V
Turn-Off Delay Time
33ns
Turn-On Delay Time
13ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4894BDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4894BDY-T1-GE3 to view detailed technical specifications.
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