N-channel MOSFET with 80V drain-source breakdown voltage and 9.5A continuous drain current. Features low 16.5mΩ drain-source on-resistance and 3.1W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in SO with fast switching times, including 17ns turn-on and 11ns fall times.
PackageSO
PolarityN-CHANNEL
Power3.1W
Quick Jump:
Technical Specifications
Vishay SI4896DY-T1 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 9.5A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 16.5mR |
| Drain to Source Voltage (Vdss) | 80V |
| Drain-source On Resistance-Max | 16.5MR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Lead Free | Contains Lead |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| RoHS Compliant | No |
| Series | SI4 |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 17ns |
| Weight | 0.01787oz |
| Width | 4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI4896DY-T1 Datasheet
Download the complete datasheet for Vishay SI4896DY-T1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
