N-Channel Silicon MOSFET, 2-Element, SOIC-8 package. Features 60V Drain-Source Voltage (Vdss), 4.3A Continuous Drain Current (ID), and 58mΩ Drain-Source On Resistance (Rds On Max). Operates from -55°C to 150°C with a maximum power dissipation of 3.1W. Includes 10ns turn-on and fall times, 20ns turn-off delay, and 665pF input capacitance. RoHS compliant and surface mountable.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4900DY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
4.3A
Drain to Source Resistance
58mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
58mR
Fall Time
10ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Input Capacitance
665pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Number of Channels
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
58mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
20ns
Turn-On Delay Time
10ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4900DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4900DY-T1-E3 to view detailed technical specifications.
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