Surface mount 2 N-Channel MOSFET featuring 40V Drain-Source Voltage (Vdss) and 5.3A Continuous Drain Current (ID). Offers a low Drain-Source On-Resistance (Rds On) of 39mR at a Gate-Source Voltage (Vgs) of 10V. This component boasts fast switching speeds with a 9ns Turn-On Delay Time and 7ns Fall Time. Encased in an 8-SOIC package, it operates within a temperature range of -50°C to 150°C and supports a maximum power dissipation of 2W.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4906DY-T1-E3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Resistance | 39mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 39MR |
| Fall Time | 7ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.5mm |
| Input Capacitance | 625pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 39mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 9ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4906DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4906DY-T1-E3 to view detailed technical specifications.
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