Dual N-channel MOSFET featuring 40V drain-source breakdown voltage and 6A continuous drain current. Surface mountable in an 8-SOIC package, this component offers a low 27mΩ drain-source on-resistance. Operating across a wide temperature range of -55°C to 150°C, it boasts a maximum power dissipation of 2W and is RoHS compliant. Ideal for power switching applications, it exhibits fast switching characteristics with turn-on delay times as low as 6ns and fall times of 5ns.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2W
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Technical Specifications
Vishay SI4910DY-T1-E3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 27mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 27mR |
| Fall Time | 5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.5mm |
| Input Capacitance | 855pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 27mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 6ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4910DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4910DY-T1-E3 to view detailed technical specifications.
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