N-Channel Silicon JFET, 2-element, 30V drain-source voltage, 8A continuous drain current, and 21mΩ maximum drain-source on-resistance. This surface-mount device features a 2-element N-channel configuration with a maximum power dissipation of 3.1W and operating temperatures from -55°C to 150°C. The SO package offers a compact footprint with dimensions of 5mm length, 4mm width, and 1.5mm height. Includes fast switching characteristics with turn-on delay time of 10ns and fall time of 9ns.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4914BDY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
8A
Drain to Source Resistance
23mR
Drain to Source Voltage (Vdss)
30V
Fall Time
9ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Number of Channels
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
21mR
RoHS Compliant
No
Series
LITTLE FOOT®
Turn-Off Delay Time
16ns
Turn-On Delay Time
10ns
Weight
0.01787oz
Width
4mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay SI4914BDY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4914BDY-T1-E3 to view detailed technical specifications.
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