N-channel MOSFET transistor featuring 30V drain-source breakdown voltage and 6.9A continuous drain current. This surface-mount component offers a low 25mΩ drain-source on-resistance and operates within a -55°C to 150°C temperature range. With a 2W maximum power dissipation and 790pF input capacitance, it is packaged in an 8-pin SOIC for tape and reel delivery. The transistor exhibits fast switching characteristics with a 12ns turn-on delay and 15ns fall time.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power2W
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Technical Specifications
Vishay SI4920DY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
6.9A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
25mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
25mR
Fall Time
15ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
0.061inch
Input Capacitance
790pF
Lead Free
Lead Free
Length
0.196inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
2W
Rds On Max
25mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
60ns
Turn-On Delay Time
12ns
Width
0.157inch
Compliance
RoHS
Compliant
Datasheet
Vishay SI4920DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4920DY-T1-E3 to view detailed technical specifications.
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