PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4920DY-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
6.9A
Drain to Source Resistance
25mR
Drain to Source Voltage (Vdss)
30V
Fall Time
15ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
25mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1V
Turn-Off Delay Time
60ns
Turn-On Delay Time
12ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI4920DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4920DY-T1-GE3 to view detailed technical specifications.
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