P-channel MOSFET with 30V drain-source voltage and 6.2A continuous drain current. Features low 21mΩ drain-source on-resistance and 1.1W power dissipation. Packaged in an 8-pin SOIC surface-mount case, this component offers fast switching with 15ns turn-on and 10ns fall times. Operating temperature range spans -55°C to 150°C.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI4923DY-T1-E3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 21mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.061inch |
| Length | 0.196inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 1.1W |
| Radiation Hardening | No |
| Rds On Max | 21mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 135ns |
| Turn-On Delay Time | 15ns |
| Width | 0.157inch |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4923DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4923DY-T1-E3 to view detailed technical specifications.
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