VISHAY

SI4925BDY

Datasheet

Vishay

SI4925BDY

Name: SI4925BDY Vishay
Brand: Vishay
SKU: SI4925BDY

P-CH MOSFET, 30V, 5.3A, 25mR, SO, 2-CH

P-channel MOSFET transistor in SO package, featuring a continuous drain current of 5.3A and a drain-to-source resistance of 25mR. Offers a drain-to-source voltage of -30V and a maximum power dissipation of 1.1W. Operates across a temperature range of -55°C to 150°C with a nominal gate-to-source voltage of -3V. Includes fast switching characteristics with a turn-on delay time of 9ns and a fall time of 34ns.

PackageSO

PolarityP-CHANNEL

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Technical Specifications

Vishay SI4925BDY technical specifications.

General

Package/Case	SO
Continuous Drain Current (ID)	5.3A
Drain to Source Resistance	25mR
Drain to Source Voltage (Vdss)	-30V
Dual Supply Voltage	-30V
Fall Time	34ns
Gate to Source Voltage (Vgs)	20V
Height	1.55mm
Length	5mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1.1W
Nominal Vgs	-3V
Number of Channels	2
On-State Resistance	41mR
Package Quantity	100
Polarity	P-CHANNEL
Reach SVHC Compliant	Unknown
RoHS Compliant	No
Series	SI4
Termination	SMD/SMT
Threshold Voltage	-3V
Turn-Off Delay Time	60ns
Turn-On Delay Time	9ns
Weight	0.002998oz
Width	4mm