Dual-channel P-channel MOSFET for general-purpose small signal applications. Features a continuous drain current of 5.3A and a drain-to-source breakdown voltage of -30V. Offers low on-resistance (Rds On Max) of 25mR and a maximum power dissipation of 1.1W. Packaged in a surface-mount SOP-8 (SO) package, this RoHS compliant component operates within a temperature range of -55°C to 150°C.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI4925BDY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
5.3A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
25mR
Drain to Source Voltage (Vdss)
-30V
Dual Supply Voltage
30V
Fall Time
34ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Nominal Vgs
-1V
Number of Channels
2
Number of Elements
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
1.1W
Radiation Hardening
No
Rds On Max
25mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
-1V
Turn-Off Delay Time
60ns
Turn-On Delay Time
9ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4925BDY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4925BDY-T1-E3 to view detailed technical specifications.
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