P-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, Surface Mount SOIC package. Features 7.3A continuous drain current, -30V drain-to-source voltage, and 29mΩ maximum drain-to-source on-resistance. Operates from -55°C to 150°C with a maximum power dissipation of 5W. Includes 1.35nF input capacitance and 16ns fall time. HALOGEN FREE and ROHS COMPLIANT.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Vishay SI4925DDY-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
7.3A
Drain to Source Resistance
29mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
29mR
Fall Time
16ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.35nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
5W
Mount
Surface Mount
Nominal Vgs
-1V
Number of Channels
2
Number of Elements
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
29mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-3V
Turn-Off Delay Time
40ns
Turn-On Delay Time
42ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4925DDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4925DDY-T1-GE3 to view detailed technical specifications.
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