The SI4927DY-T1-E3 is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 2.5W and a continuous drain current of 7.4A. The device is packaged in a SO package and is available in quantities of 2500 per reel. The MOSFET has a drain to source resistance of 28mR and a drain to source voltage of -30V. It also features a fall time of 42ns and turn-off delay times of 75ns.
PackageSO
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Vishay SI4927DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 7.4A |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 42ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| RoHS Compliant | No |
| Series | SI4 |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI4927DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4927DY-T1-E3 to view detailed technical specifications.
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