N-Channel Silicon Metal-oxide Semiconductor FET, a 2-element, 2-channel JFET designed for surface mounting in an SOIC-8 package. Features a 30V drain-source breakdown voltage and a maximum continuous drain current of 4.4A. Offers a low drain-source on-resistance of 36mR, with turn-on delay time of 6ns and fall time of 14ns. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.1W.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI4936ADY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 36mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 36mR |
| Fall Time | 14ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Input Capacitance | 220pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 1.1W |
| Radiation Hardening | No |
| Rds On Max | 36mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 6ns |
| Weight | 0.01787oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4936ADY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4936ADY-T1-E3 to view detailed technical specifications.
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