The SI4942DY-T1-GE3 is a surface mount N-Channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 1.1W and is RoHS compliant. The device features a drain to source breakdown voltage of 40V and a continuous drain current of 5.3A. It also has a drain to source resistance of 21mR and a gate to source voltage of 20V.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI4942DY-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 21mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 11ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.1W |
| Radiation Hardening | No |
| Rds On Max | 21mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 13ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4942DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4942DY-T1-GE3 to view detailed technical specifications.
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