SI4942DY-T1-GE3

Name: SI4942DY-T1-GE3 Vishay
Brand: Vishay
SKU: SI4942DY-T1-GE3

MOSFET 2N-CH 40V 5.3A 8-SOIC

PackageSOIC

MountingSurface Mount

PolarityN-CHANNEL

Power1.1W

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Vishay SI4942DY-T1-GE3 technical specifications.

Package/Case	SOIC
Continuous Drain Current (ID)	5.3A
Drain to Source Breakdown Voltage	40V
Drain to Source Resistance	21mR
Drain to Source Voltage (Vdss)	40V
Fall Time	11ns
FET Type	2 N-Channel
Gate to Source Voltage (Vgs)	20V
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1.1W
Mount	Surface Mount
Package Quantity	2500
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	1.1W
Radiation Hardening	No
Rds On Max	21mR
RoHS Compliant	Yes
Series	TrenchFET®
Turn-Off Delay Time	31ns
Turn-On Delay Time	13ns