SI4947ADY-T1-E3

P-CH MOSFET -30V, 3.9A, 80mR, SOIC, P-CH

P-channel MOSFET, 30V drain-source breakdown voltage, 3.9A continuous drain current, and 80mΩ maximum drain-source on-resistance. This surface-mount device features an 8-pin SOIC package, 150°C maximum operating temperature, and 2W power dissipation. It offers fast switching with turn-on delay time of 8ns and fall time of 10ns. RoHS compliant and lead-free.

PackageSOIC

MountingSurface Mount

PolarityP-CHANNEL

Power2W

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Technical Specifications

Vishay SI4947ADY-T1-E3 technical specifications.

General

Package/Case	SOIC
Continuous Drain Current (ID)	3.9A
Drain to Source Breakdown Voltage	-30V
Drain to Source Resistance	80mR
Drain to Source Voltage (Vdss)	-30V
Drain-source On Resistance-Max	80mR
Fall Time	10ns
Gate to Source Voltage (Vgs)	20V
Height	0.061inch
Lead Free	Lead Free
Length	0.196inch
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1.2W
Mount	Surface Mount
Nominal Vgs	-1V
Number of Elements	2
Package Quantity	1
Packaging	Tape and Reel
Polarity	P-CHANNEL
Polarization	P
Power Dissipation	2W
Radiation Hardening	No
Rds On Max	80mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	TrenchFET®
Termination	SMD/SMT
Threshold Voltage	-1V
Turn-Off Delay Time	21ns
Turn-On Delay Time	8ns
Width	0.157inch