Dual P-channel MOSFETs designed for efficient power switching. Featuring a 30V drain-source voltage and a continuous drain current of 3.7A, these devices offer a low on-resistance of 53mΩ. With a maximum power dissipation of 2W and a compact SO package, they are suitable for demanding applications. Operating across a wide temperature range from -55°C to 150°C, these RoHS compliant MOSFETs exhibit fast switching speeds with turn-on delay times as low as 7ns.
PackageSO
Voltage30V
Current37A
PolarityP-CHANNEL
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Technical Specifications
Vishay SI4953ADY-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 3.7A |
| Current | 37A |
| Drain to Source Resistance | 53mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Number of Channels | 2 |
| Package Quantity | 100 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| RoHS Compliant | Yes |
| Series | SI4 |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 7ns |
| Voltage | 30V |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4953ADY-E3 Datasheet
Download the complete datasheet for Vishay SI4953ADY-E3 to view detailed technical specifications.
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