P-Channel MOSFET, TrenchFET® series, featuring 30V drain-source breakdown voltage and 3.7A continuous drain current. Offers a low 53mΩ drain-source on-resistance and 1.1W power dissipation. Designed for surface mounting in an SOP-8 package, this RoHS compliant component operates from -55°C to 150°C with fast switching times including a 7ns turn-on delay.
PackageSOIC
Voltage30V
Current37A
MountingSurface Mount
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Technical Specifications
Vishay SI4953ADY-T1-E3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
3.7A
Current
37A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
53mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
53mR
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Nominal Vgs
-1V
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
53mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1V
Turn-Off Delay Time
40ns
Turn-On Delay Time
7ns
Voltage
30V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4953ADY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4953ADY-T1-E3 to view detailed technical specifications.
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