P-channel, small-signal MOSFET for general-purpose applications. Features 3.7A continuous drain current and 30V drain-to-source breakdown voltage. Offers low 53mΩ drain-to-source resistance at 10V, with a nominal gate-to-source voltage of -1V. Operates across a wide temperature range of -55°C to 150°C, with a maximum power dissipation of 2W. Packaged in a halogen-free, RoHS-compliant SOP-8 surface-mount package.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
Vishay SI4953ADY-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 53mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 53mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 7ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4953ADY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4953ADY-T1-GE3 to view detailed technical specifications.
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