The SI4953DY is a P-channel MOSFET with a continuous drain current rating of 4.9A and a drain to source breakdown voltage of -30V. It has a drain to source resistance of 53mR and a gate to source voltage rating of 20V. The device is packaged in a SO package and has a maximum operating temperature range of -55°C to 150°C. The SI4953DY is not RoHS compliant and is available in a tape and reel packaging with 100 devices per package.
PackageSO
Current Rating-4.9A
PolarityP-CHANNEL
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Technical Specifications
Vishay SI4953DY technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 4.9A |
| Current Rating | -4.9A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 53mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Number of Channels | 2 |
| Package Quantity | 100 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| RoHS Compliant | No |
| Series | SI4 |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.002998oz |
| Width | 4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI4953DY Datasheet
Download the complete datasheet for Vishay SI4953DY to view detailed technical specifications.
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