The SI4953DY-T1-E3 is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 4.9A and a drain to source voltage of -30V. The device is packaged in a SO package with a height of 1.55mm and a length of 5mm. It is RoHS compliant and has a power dissipation of 2W.
PackageSO
PolarityP-CHANNEL
Power2W
Quick Jump:
Technical Specifications
Vishay SI4953DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 4.9A |
| Drain to Source Resistance | 53mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| RoHS Compliant | Yes |
| Series | SI4 |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4953DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4953DY-T1-E3 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
