P-channel MOSFET with 8V drain-source voltage (Vdss) and 8A continuous drain current (ID). Features low 21mΩ drain-source on-resistance (Rds On Max) and 8V gate-source voltage (Vgs). This surface mount device operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 2W. Packaged in an 8-pin SOIC N for tape and reel distribution.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI4965DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 21mR |
| Drain to Source Voltage (Vdss) | 8V |
| Drain-source On Resistance-Max | 21mR |
| Fall Time | 90ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.55mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 21mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 170ns |
| Turn-On Delay Time | 35ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4965DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4965DY-T1-E3 to view detailed technical specifications.
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