The SI4965DY-T1-GE3 is a P-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 8A and a drain to source resistance of 21mR. The device is packaged in a SOIC package and is mounted using surface mount techniques. The MOSFET is RoHS compliant and has a maximum power dissipation of 2W.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI4965DY-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 21mR |
| Drain to Source Voltage (Vdss) | 8V |
| Fall Time | 90ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 21mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 170ns |
| Turn-On Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4965DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4965DY-T1-GE3 to view detailed technical specifications.
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