SI4966DY-T1-E3

N-Channel MOSFET, 20V, 7.1A, 25mR Rds On, SO-8

N-Channel MOSFET, 20V Vds, 7.1A Continuous Drain Current, and 25mΩ Max Drain-Source On-Resistance. This surface-mount device features a 2-element, N-channel silicon Metal-Oxide-Semiconductor FET construction. Operating across a temperature range of -55°C to 150°C, it offers a maximum power dissipation of 2W. The component is RoHS compliant and packaged in a lead-free SO-8 package.

PackageSO

MountingSurface Mount

PolarityN-CHANNEL

Power2W

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Technical Specifications

Vishay SI4966DY-T1-E3 technical specifications.

General

Package/Case	SO
Continuous Drain Current (ID)	7.1A
Drain to Source Breakdown Voltage	20V
Drain to Source Resistance	25mR
Drain to Source Voltage (Vdss)	20V
Drain-source On Resistance-Max	25mR
Fall Time	40ns
FET Type	2 N-Channel
Gate to Source Voltage (Vgs)	12V
Height	1.55mm
Lead Free	Lead Free
Length	5mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2W
Mount	Surface Mount
Nominal Vgs	600mV
Number of Channels	2
Number of Elements	2
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Polarization	N
Power Dissipation	2W
Rds On Max	25mR
Reach SVHC Compliant	Unknown
RoHS Compliant	Yes
Series	TrenchFET®
Turn-Off Delay Time	90ns
Turn-On Delay Time	40ns
Weight	0.006596oz
Width	4mm