Dual N-channel MOSFET featuring 20V drain-source voltage and 7.1A continuous drain current. Offers low 25mΩ drain-to-source resistance and operates with a 12V gate-source voltage. This surface-mount SO package component boasts fast switching times with 40ns turn-on and 90ns turn-off delays. Maximum power dissipation is 2W, with an operating temperature range of -55°C to 150°C.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4966DY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 7.1A |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 40ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 40ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4966DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4966DY-T1-GE3 to view detailed technical specifications.
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