The SI4967DY-E3 is a P-CHANNEL power MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 7.5A and a drain to source resistance of 23mR. The device is packaged in a SOIC package with dimensions of 1.55mm height, 5mm length, and 4mm width. It is RoHS compliant and available in a package quantity of 100 per rail/tube packaging.
PackageSOIC
PolarityP-CHANNEL
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Technical Specifications
Vishay SI4967DY-E3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | -12V |
| Fall Time | 95ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Number of Channels | 2 |
| Package Quantity | 100 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| RoHS Compliant | Yes |
| Series | SI4 |
| Turn-Off Delay Time | 210ns |
| Turn-On Delay Time | 25ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4967DY-E3 Datasheet
Download the complete datasheet for Vishay SI4967DY-E3 to view detailed technical specifications.
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