The SI4967DY-T1 is a P-channel MOSFET with a continuous drain current of 7.5A and a drain to source voltage of -12V. It features a drain to source resistance of 23mR and a gate to source voltage of 8V. The device is packaged in a SO package with dimensions of 5mm in length, 4mm in width, and 1.55mm in height. The SI4967DY-T1 operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2W.
PackageSO
PolarityP-CHANNEL
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Technical Specifications
Vishay SI4967DY-T1 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | -12V |
| Fall Time | 95ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| RoHS Compliant | No |
| Series | SI4 |
| Turn-Off Delay Time | 210ns |
| Turn-On Delay Time | 25ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI4967DY-T1 Datasheet
Download the complete datasheet for Vishay SI4967DY-T1 to view detailed technical specifications.
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