N-Channel Power MOSFET, 100V Vds, 2.6A continuous drain current, and 150mΩ drain-source on-resistance. Features a 2-element silicon metal-oxide semiconductor FET construction in an SOIC-8 package. Operates from -55°C to 150°C with a maximum power dissipation of 2W. Includes 10ns turn-on delay and 10ns fall time.
PackageSO
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4982DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 150mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Nominal Vgs | 2V |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | SI4 |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4982DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4982DY-T1-E3 to view detailed technical specifications.
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