N-channel MOSFET with 40V drain-source voltage and 12A continuous drain current. Features low 18mΩ drain-source resistance and 3V threshold voltage. Operates across a -55°C to 150°C temperature range with 31W maximum power dissipation. Surface mountable in a 3mm x 1.9mm x 0.75mm PPAK CHIPFET package, supplied on tape and reel. RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI5410DU-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 12A |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 1.35nF |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 31W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 25ns |
| Width | 1.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5410DU-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5410DU-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
