N-channel MOSFET with 30V drain-source voltage and 12A continuous drain current. Features low 14.5mΩ drain-source on-resistance at 10V gate-source voltage, supporting up to 3.1W power dissipation. Surface mountable in a compact 3mm x 1.9mm x 0.75mm package. Operates across a wide temperature range of -55°C to 150°C and is RoHS compliant. Includes fast switching characteristics with 20ns turn-on and 20ns turn-off delay times.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI5418DU-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
12A
Drain to Source Resistance
14.5mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
14.5MR
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
0.75mm
Input Capacitance
1.35nF
Lead Free
Lead Free
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
14.5mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
3V
Turn-Off Delay Time
20ns
Turn-On Delay Time
20ns
Width
1.9mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI5418DU-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5418DU-T1-GE3 to view detailed technical specifications.
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