P-channel MOSFET transistor featuring a -30V drain-source breakdown voltage and 12A continuous drain current. Offers a low 15mΩ Rds On resistance at a 10V gate-source voltage. Designed for surface mount applications with a compact 3.08mm x 1.98mm x 0.85mm footprint. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 31W.
MountingSurface Mount
PolarityP-CHANNEL
Power31W
Quick Jump:
Technical Specifications
Vishay SI5429DU-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
12A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
15mR
Drain to Source Voltage (Vdss)
-30V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
0.85mm
Input Capacitance
2.32nF
Length
3.08mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
31W
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
31W
Radiation Hardening
No
Rds On Max
15mR
Reach SVHC Compliant
No
Series
TrenchFET®
Threshold Voltage
-1V
Turn-Off Delay Time
60ns
Turn-On Delay Time
35ns
Width
1.98mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI5429DU-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5429DU-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
