The SI5433BDC-T1-GE3 is a P-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 4.8A and a drain to source voltage of 20V. The device features a drain to source resistance of 37mR and a maximum power dissipation of 1.3W. It is packaged in a surface mount package and is available in quantities of 3000 per reel. The device is RoHS compliant and is suitable for use in high-temperature applications.
PackageSMD/SMT
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI5433BDC-T1-GE3 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 4.8A |
| Drain to Source Resistance | 37mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 37mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5433BDC-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5433BDC-T1-GE3 to view detailed technical specifications.
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