P-channel, surface-mount MOSFET designed for general-purpose small-signal applications. Features a continuous drain current of 5.2A and a drain-to-source breakdown voltage of -8V. Offers a low drain-source on-resistance of 33mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.3W. Packaged in a lead-free, 1206-8 SMD/SMT case, supplied on tape and reel.
PackageSMD/SMT
MountingSurface Mount
PolarityP-CHANNEL
Power1.3W
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Technical Specifications
Vishay SI5445BDC-T1-E3 technical specifications.
General
Package/Case
SMD/SMT
Continuous Drain Current (ID)
5.2A
Drain to Source Breakdown Voltage
-8V
Drain to Source Resistance
33mR
Drain to Source Voltage (Vdss)
8V
Drain-source On Resistance-Max
33mR
Fall Time
22ns
Gate to Source Voltage (Vgs)
8V
Height
0.043inch
Lead Free
Lead Free
Length
0.122inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.3W
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
1.3W
Radiation Hardening
No
Rds On Max
33mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
75ns
Turn-On Delay Time
12ns
Width
0.067inch
Compliance
RoHS
Compliant
Datasheet
Vishay SI5445BDC-T1-E3 Datasheet
Download the complete datasheet for Vishay SI5445BDC-T1-E3 to view detailed technical specifications.
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