Vishay
SI5445DC-T1-E3
Small Signal Field-Effect Transistor, 5.2A I(D), 8V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 1206-8, CHIPFET-8
Small Signal Field-Effect Transistor, 5.2A I(D), 8V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 1206-8, CHIPFET-8
PolarityP-CHANNEL
Power1.3W
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Technical Specifications
Vishay SI5445DC-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 5.2A |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | -8V |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.3W |
| RoHS Compliant | Yes |
| Series | SI5 |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.002998oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5445DC-T1-E3 Datasheet
Download the complete datasheet for Vishay SI5445DC-T1-E3 to view detailed technical specifications.
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