P-channel MOSFET, 20V drain-source voltage, 3.5A continuous drain current, and 76mΩ drain-source resistance at 4.5V gate-source voltage. Features a 2.5W maximum power dissipation and operates within a -55°C to 150°C temperature range. This surface-mount device offers fast switching with turn-on delay of 14ns and fall time of 17ns. Packaged in tape and reel, it is RoHS compliant.
PackageSMD/SMT
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI5447DC-T1-GE3 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Resistance | 76mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.1mm |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 76mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.002998oz |
| Width | 1.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5447DC-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5447DC-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
