P-channel MOSFET, 30V drain-source voltage, 3.1A continuous drain current, and 85mΩ drain-source resistance. Features a 12V gate-source voltage, 13ns turn-on delay, 14ns fall time, and 35ns turn-off delay. Surface mountable in a 1206-8 package, this component offers 1.3W maximum power dissipation and operates from -55°C to 150°C.
PackageSMD/SMT
MountingSurface Mount
PolarityP-CHANNEL
Power1.3W
Quick Jump:
Technical Specifications
Vishay SI5449DC-T1-E3 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.1mm |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.3W |
| Rds On Max | 85mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.002998oz |
| Width | 1.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5449DC-T1-E3 Datasheet
Download the complete datasheet for Vishay SI5449DC-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.