P-channel, surface-mount MOSFET designed for general-purpose small signal applications. Features a continuous drain current of 4.5A and a drain-to-source breakdown voltage of -20V. Offers a low drain-source on-resistance of 45mR at a gate-source voltage of 12V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.3W. Packaged in an 8-pin chipFET SMD/SMT package, supplied on tape and reel.
PackageSMD/SMT
MountingSurface Mount
PolarityP-CHANNEL
Power1.3W
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Technical Specifications
Vishay SI5461EDC-T1-E3 technical specifications.
General
Package/Case
SMD/SMT
Continuous Drain Current (ID)
4.5A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
45mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
45mR
Fall Time
4500ns
Gate to Source Voltage (Vgs)
12V
Height
0.043inch
Lead Free
Lead Free
Length
0.122inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.3W
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
1.3W
Radiation Hardening
No
Rds On Max
45mR
RoHS Compliant
Yes
Turn-Off Delay Time
27000ns
Turn-On Delay Time
2500ns
Width
0.067inch
Compliance
RoHS
Compliant
Datasheet
Vishay SI5461EDC-T1-E3 Datasheet
Download the complete datasheet for Vishay SI5461EDC-T1-E3 to view detailed technical specifications.
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