The SI5461EDC-T1-GE3 is a P-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 4.5A and a drain to source breakdown voltage of 20V. The device features a drain to source resistance of 45mR and a maximum power dissipation of 1.3W. It is packaged in a surface mount package and is RoHS compliant.
PackageSMD/SMT
MountingSurface Mount
PolarityP-CHANNEL
Power1.3W
Quick Jump:
Technical Specifications
Vishay SI5461EDC-T1-GE3 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 15000ns |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Rds On Max | 45mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 27000ns |
| Turn-On Delay Time | 2500ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5461EDC-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5461EDC-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.