P-channel Silicon JFET for surface mount applications. Features 12V drain-source breakdown voltage and 28mΩ maximum drain-source on-resistance. Continuous drain current capability of 7.7A with a maximum power dissipation of 6.3W. Operates across a temperature range of -55°C to 150°C. Includes 1.4nF input capacitance and fast switching times with 10ns turn-on delay. Packaged in a compact 1206-8 chip carrier, tape and reel.
PackageSMD/SMT
Voltage12V
Current6A
MountingSurface Mount
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Technical Specifications
Vishay SI5475BDC-T1-E3 technical specifications.
General
Package/Case
SMD/SMT
Continuous Drain Current (ID)
7.7A
Current
6A
Drain to Source Breakdown Voltage
12V
Drain to Source Resistance
28mR
Drain to Source Voltage (Vdss)
12V
Drain-source On Resistance-Max
28mR
Fall Time
72ns
Gate to Source Voltage (Vgs)
8V
Height
0.043inch
Input Capacitance
1.4nF
Lead Free
Lead Free
Length
0.122inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
6.3W
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
28mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
65ns
Turn-On Delay Time
10ns
Voltage
12V
Width
0.067inch
Compliance
RoHS
Compliant
Datasheet
Vishay SI5475BDC-T1-E3 Datasheet
Download the complete datasheet for Vishay SI5475BDC-T1-E3 to view detailed technical specifications.
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