P-Channel MOSFET, 12V Vds, 5.5A continuous drain current, 31mΩ Rds On. Features 15ns turn-on delay and 80ns fall time. Surface mountable in a 1206-8 package, operating from -55°C to 150°C. RoHS compliant.
PackageSMD/SMT
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Vishay SI5475DC-T1-E3 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Resistance | 31mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.1mm |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 31mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 122ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.002998oz |
| Width | 1.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5475DC-T1-E3 Datasheet
Download the complete datasheet for Vishay SI5475DC-T1-E3 to view detailed technical specifications.
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