N-channel MOSFET for surface mount applications, featuring a 60V drain-to-source voltage and 12A continuous drain current. This component offers a low 34mΩ drain-to-source resistance and a maximum power dissipation of 31W. Operating across a wide temperature range from -55°C to 150°C, it boasts fast switching speeds with turn-on and fall times of 10ns. The compact 8-pin PowerPAK ChipFET package measures 3mm x 1.9mm x 0.75mm and is supplied on tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI5476DU-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 12A |
| Drain to Source Resistance | 34mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 1.1nF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 31W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 34mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 10ns |
| Width | 1.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5476DU-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5476DU-T1-GE3 to view detailed technical specifications.
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