The SI5481DU-T1-E3 is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 17.8W and is RoHS compliant. The device is packaged in a tape and reel format with 3000 units per package and has a surface mount package quantity. It features a trench gate structure and has a maximum drain to source resistance of 22mR.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI5481DU-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 12A |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 167ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.75mm |
| Input Capacitance | 1.61nF |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 17.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 22mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 6ns |
| Width | 1.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5481DU-T1-E3 Datasheet
Download the complete datasheet for Vishay SI5481DU-T1-E3 to view detailed technical specifications.
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