P-channel Power MOSFET, 20V Drain-Source Voltage, 12A Continuous Drain Current. Features 8-pin PowerPAK ChipFET surface-mount package with no leads, measuring 3mm x 1.9mm x 0.8mm. Offers 25mΩ maximum Drain-Source On-Resistance at 4.5V Gate-Source Voltage. Operates from -55°C to 150°C.
PackagePowerPAK ChipFET
MountingSurface Mount
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Technical Specifications
Vishay SI5485DU-T1-GE3 technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | Chip FET |
| Package/Case | PowerPAK ChipFET |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3 |
| Package Width (mm) | 1.9 |
| Package Height (mm) | 0.8(Max) |
| Seated Plane Height (mm) | 0.75 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Hex Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±12V |
| Maximum Continuous Drain Current | 12A |
| Maximum Gate Threshold Voltage | 1.5V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | 28@8V|[email protected]nC |
| Typical Input Capacitance @ Vds | 1100@10VpF |
| Maximum Power Dissipation | 3100mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Typical Output Capacitance | 300pF |
Compliance
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SI5485DU-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5485DU-T1-GE3 to view detailed technical specifications.
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