Vishay SI5499DC-T1-GE3 technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 8V |
| Drain to Source Resistance | 36mR |
| Drain to Source Voltage (Vdss) | 8V |
| Gate to Source Voltage (Vgs) | 5V |
| Input Capacitance | 1.29nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 6.2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 36mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI5499DC-T1-GE3 to view detailed technical specifications.
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