The SI5509DC-T1-GE3 is a surface mount N and P-Channel TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 4.5W and a continuous drain current of 4.8A. The device has a drain to source voltage of 20V and a gate to source voltage of 12V. The input capacitance is 455pF and the Rds On max is 52mR. The device is RoHS compliant and available in a package quantity of 3000 on a tape and reel.
PackageSMD/SMT
MountingSurface Mount
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Technical Specifications
Vishay SI5509DC-T1-GE3 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 4.8A |
| Drain to Source Voltage (Vdss) | 20V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 455pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 4.5W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 52mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5509DC-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5509DC-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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