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Technical Specifications
Vishay SI5511DC-T1-GE3 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | N and P-Channel |
| Input Capacitance | 435pF |
| Max Power Dissipation | 2.6W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 55mR |
| RoHS Compliant | No |
| Series | TrenchFET® |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI5511DC-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5511DC-T1-GE3 to view detailed technical specifications.
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