N-Channel and P-Channel Silicon FET, Surface Mount, 2-Element, 20V Drain to Source Voltage, 3.7A Continuous Drain Current. Features 55mR Max Drain to Source Resistance, 19ns Turn-On Delay Time, and 15ns Turn-Off Delay Time. Operates from -55°C to 150°C with 3.1W Max Power Dissipation. Packaged in Tape and Reel, 1206-8 SMD/SMT form factor. RoHS Compliant.
PackageSMD/SMT
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI5513CDC-T1-E3 technical specifications.
General
Package/Case
SMD/SMT
Continuous Drain Current (ID)
3.7A
Drain to Source Resistance
120mR
Drain to Source Voltage (Vdss)
20V
Fall Time
40ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
12V
Height
1.1mm
Input Capacitance
285pF
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Radiation Hardening
No
Rds On Max
55mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
15ns
Turn-On Delay Time
19ns
Weight
0.002998oz
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI5513CDC-T1-E3 Datasheet
Download the complete datasheet for Vishay SI5513CDC-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
